MBRM120ET3 |
RFQ for MBRM120ET3 Required Field |
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| Technical/Catalog Information | MBRM120ET3G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 530mV @ 1A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10A @ 20V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | Powermite? |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRM120ET3G MBRM120ET3G MBRM120ET3GOSDKR ND MBRM120ET3GOSDKRND MBRM120ET3GOSDKR |
| Product | Manufacturers | Pack | D/C |
| MBRM120ET3 | - | SOD12 | 2002 |
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
20 | V |
| Average Rectified Forward Current (At Rated VR, TC = 130°C) |
IO | 1.0 |
A |
| Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135°C) |
IFRM | 2.0 | A |
| Non-Repetitive Peak Surge Current (Surge applied at rated load conditions,halfwave,single phase, 60Hz) |
IFSM | 50 | A |
| Storage Temperature | Tstg,TC | 65 to +150 | |
| Operating Junction Temperature | TJ | 65 to +150 | |
| Voltage Rate of Change (Rated VR TJ = 25°C) | dv/dt | 10,000 | V/s |
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| MBRF30L60CTG | ||
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| MBRF30HxxCT |
